ST stw43nm50n free download

File name stw43nm50n.pdf

STW43NM50N N-channel 500 V, 0.070 37 A MDmeshTM II Power MOSFET , TO-247 Features VDSS @ RDS(on) Type ID Tjmax max STW43NM50N 550 V < 0.085 37 A 100% avalanche tested Low input capacitance and gate charge 3 2 1 Low gate input resistance TO-247 Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STW43NM50N 43NM50N TO-247 Tube January 2010 Doc ID 14168 Rev 5 1/12 www.st.com 12 Contents STW43NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14168 Rev 5 STW43NM50N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage