Philips bf1102 r free download

File name bf1102_r.pdf

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102 BF1102R Specially designed for 5 V applications 1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC 2 gate 2 (1 and 2) source (1 and 2) High forward transfer admittance 3 drain (1) drain (1) High forward transfer admittance to input capacitance ratio. 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) APPLICATIONS 6 gate 1 (2) gate 1 (2) Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional handbook, halfpage g2 (1, 2) communications equipment. 6 5 4 DESCRIPTION g1 (1) AMP1 d (1) The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization g1 (2) AMP2 d (2) and a very good cross-modulation performance at 5 V 1 2 3 supply voltage; integrated diodes between the gates and BF1102 marking code: W1. source protect against excessive input voltage surges. BF1102R marking code: W2-. s (1, 2) MBL029 Both devices have a SOT363