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Descr: . Electronic Components Datasheets Active components Transistors ST stbv45.pdf
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STBV45 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger TO-92 TO-92AP Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV45G and STBV45G-AP are supplied using halogen-free molding compound. Table 1. Device summary Order codes Marking Package Packaging STBV45 BV45 TO-92 Bulk STBV45G BV45G TO-92 Bulk STBV45-AP BV45 TO-92AP Ammopack STBV45G-AP BV45G TO-92AP Ammopack October 2008 Rev 6 1/10 www.st.com 10 Electrical ratings STBV45 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 0.75 A ICM Collector peak current (tP < 5 ms) 1.5 A IB Base current 0.4 A IBM Base peak current (tP < 5 ms) 0.75 A PTOT Total dissipation at Tc = 25

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