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STY140NS10 N-CHANNEL 100V - 0.009 - 140A MAX247TM MESH OVERLAYTM POWER MOSFET TYPE VDSS RDS(on) ID STY140NS10 100V <0.011 140A s TYPICAL RDS(on) = 0.009 s STANDARD THRESHOLD DRIVE s 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced 3 family of power MOSFETs with outstanding 2 performances. The new patent pending strip layout 1 coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, Max247TM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SWITCH MODE POWER SUPPLY (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k) 100 V VGS Gate- source Voltage