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TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL 3 EQUIPMENT 2 1 DESCRIPTION The TIP110 and TIP112 are silicon epitaxial-base TO-220 NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K R2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP110 TIP112 PNP TIP115 TIP117 V CBO Collector-Base Volta ge (I E = 0) 60 100 V V CEO Collector-Emitte r Voltage (I B = 0) 60 100 V VEBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 2 A I CM Collector Peak Current 4 A IB Base Current 50 A Total Dissipation at T case 25 o C 50 W P tot T amb 25 o C 2 W o T st g Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C * For PNP types voltage and current values are negative September 1997