LGE ktc3192 free download

File name ktc3192.pdf

KTC3192(NPN) TO-92 Transistors 1. COLLECTOR TO-92 2. EMITTER 3. BASE Features High power gain: Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V Collector cut-off current ICBO VCB= 35V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 4V , IC=0 1.0 A DC current gain hFE VCE=12 V, IC= 2mA 40 240 Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB= 1mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 10mA, IB= 1mA 1.0 V Transition frequency fT VCE= 10 V, IC= 1mA 100 400 MHz Collector output capacitance Cob VCB=10 V,IE=0,f=1MHZ 1.4 3.2 pF VCE=10V,IC=1mA, Collector-base time constant Cc.rbb' 10 50 pS