Philips bf1203 free download

File name bf1203.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification 2001 Apr 25 Supersedes data of 2000 Dec 04 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 gate 1 (a) Superior cross-modulation performance during AGC 2 gate 2 High forward transfer admittance 3 drain (a) High forward transfer admittance to input capacitance 4 drain (b) ratio. 5 source 6 gate 1 (b) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. g1 (b) s d (b) handbook, halfpage 6 5 4 DESCRIPTION The BF1203 is a combination of two different dual gate AMP AMP MOS-FET amplifiers with shared source and gate 2 leads. a b The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very 1 2 3 good cross-modulation performance during AGC. Top view g1 (a) g2 d (a) MBL254 Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is Marking code: L2- encapsulated in a SOT363 micro-miniature plastic package. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS