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2SA2018 SOT-523 Transistor(PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA MARKING: BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V Collector cut-off current ICBO VCB= -15 V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=- 6V, IC=0 -0.1 A DC current gain hFE VCE=-2V, IC=-10mA 270 680 Collector-emitter saturation voltage VCE(sat) IC=-200mA,IB=-10mA -0.25 V Transition frequency fT VCE=-2V,IC=-10mA, f=100MHz 260 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 6.5 pF 2SA2018 SOT-523 Transistor(PNP) Typical Characteristics