ST 2stw1695 free download

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2STW1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schematic diagram amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STW1695 2STW1695 TO-247 Tube October 2008 Rev 4 1/9 www.st.com 9 Electrical ratings 2STW1695 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -140 V VCEO Collector-emitter voltage (IB = 0) -140 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -10 A ICM Collector peak current (tP < 5 ms) -20 A Ptot Total dissipation at Tc = 25