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STF13NM60N-H N-channel 600 V, 0.28 11 A MDmeshTM II Power MOSFET , in TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max STF13NM60N-H 650 V < 0.36 11 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 Application TO-220FP Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Packages Packaging STF13NM60N-H(1) 13NM60N TO-220FP Tube 1. The device meets ECOPACK