LGE bc636-bc638-bc640 free download

File name bc636-bc638-bc640.pdf

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.83 W RJA Thermal Resistance, junction to Ambient 150 /W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT IC=-100A,IE=0 BC636 -45 Collector-base breakdown voltage V(BR)CBO BC638 -60 V BC640 -100 IC =-1mA,IB=0 BC636 -45 Collector-emitter breakdown voltage V(BR)CEO BC638 -60 V BC640 -80 Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V,IC=0 - 0.1 A hFE(1) VCE= -2V,IC=- 5mA 40 DC current gain hF