2 228f010 free download

File name 228f010.pdf

A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range Y Integrated Program Erase Stop Timer b 40 C to a 125 C Y Command Register Architecture for Y Flash Memory Electrical Chip-Erase Microprocessor Microcontroller 1 Second Typical Chip-Erase Compatible Write Interface Y Quick-Pulse Programming Algorithm Y Noise Immunity Features 10 ms Typical Byte-Program g 10% VCC Tolerance 2 Second Chip-Program Maximum Latch-Up Immunity Y 1 000 Erase Program Cycles Minimum through EPI Processing over Automotive Temperature Range Y ETOX TM III Flash Nonvolatile Memory Y 12 0V g 5% VPP Technology EPROM-Compatible Process Base Y High-Performance Read High-Volume Manufacturing 120 ns Maximum Access Time Experience Y CMOS Low Power Consumption Y JEDEC-Standard Pinouts 30 mA Maximum Active Current 32-Pin Plastic DIP 300 mA Maximum Standby Current 32-Lead PLCC (See Packaging Spec Order 231369) Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on- board during subassembly test in-system during final test and in-system after-sale The 28F010 increases memory flexibility while contributing to time- and cost-savings The 28F010 is a 1024-kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel's 28F010 is offered in 32-pin Plastic DIP or 32-lead PLCC packages Pin assignments conform to JEDEC standards Extended erase and program cycling capability is designed into Intel's ETOX TM III (EPROM Tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to extend reliable cyclin