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BUW89 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION s SWITCHING REGULATORS 3 2 s MOTOR CONTROL 1 s HIGH FREQUENCY AND EFFICENCY CONVERTERS TO-218 DESCRIPTION The BUW89 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-emitter Voltage (V BE = -1.5V) 160 V V CEO Collector-emitter Voltage (I B = 0) 90 V V EBO Emitt er-Base Voltage (IC = 0) 7 V IC Collector Current 25 A I CM Collector Peak Current 45 A IB Base Current 6 A I BM Base Peak Current 9 A P Base Reverse Bias Base Power Dissipation 1 W (B.E. junction in avalanche) o P t ot Total Power Dissipation at T case < 25 C 125 W o T stg Storage T emperature -65 to 175 C o Tj Max Operating Junction T emperature 175 C July 1997 1/5 BUW89 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 1.2 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CER Collector Cut-off V CE = V CEV