Philips bfg425w free download

File name bfg425w.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 base Emitter is thermal lead 3 emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end 3 4 handbook, halfpage Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 2 1 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong DESCRIPTION * = t : made in Malaysia NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Fig.1 Simplified outline SOT343R. dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 10 V VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 25 30 mA Ptot total power dissipation Ts 103 C 135 mW hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 C 50 80 120 Cre feedback capacitance