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STD1HNC60 N-CHANNEL 600V - 4 - 2A - IPAK/DPAK PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STD1HNC60 600 V <5 2A s TYPICAL RDS(on) = 4 s EXTREMELY HIGH dv/dt CAPABILITY 3 3 s 100% AVALANCHE TESTED 2 s NEW HIGH VOLTAGE BENCHMARK 1 1 s GATE CHARGE MINIMIZED IPAK DPAK DESCRIPTION TO-251 TO-252 The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage