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BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR s FULLY MOLDED ISOLATED PACKAGE s 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN 3 transistor mounted in TO-220FP fully molded 2 1 isolated package. It is inteded for power linear and switching applications. TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CER Collector-Base Voltage (R BE = 100 ) 115 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 3 A I CM Collector Peak Current 5 A IB Base Current 1 A o P t ot Total Dissipation at T c 25 C 15 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. January 1998 1/4 BD241CFP THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 8.4 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CEO Collector Cut-off V CE = 60 V 0.3 mA Current (IB = 0) I CES Collector Cut-off V CE = 100 V 0.2 mA Current (V BE = 0) I EBO Emitter Cut-off Current V EB = 5 V 1 mA (I C = 0) V CEO(sus ) Collector-Emitter I C = 30 mA