LGE s9013 to-92 free download

File name s9013_to-92.pdf

S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A , IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A Collector cut-off current ICEO VCE=20V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE=1V, IC=50mA 64 400 DC current gain hFE(2) VCE=1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank D E F