ST stb5na80 free download

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STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS(on) ID ST B5NA80 800 V < 2.4 4.7 A s TYPICAL RDS(on) = 1.8 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s VERY HIGH CURRENT CAPABILITY 3 3 s APPLICATION ORIENTED 12 1 CHARACTERIZATION s THROUGH-HOLE I2PAK (TO-262) POWER I2PAK D2PAK PACKAGE IN TUBE (SUFFIX "-1") s SURFACE-MOUNTING D2PACK (TO-263) TO-262 TO-263 POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 800 V VDGR Drain- gate Voltage (R GS = 20 k) 800 V V GS Gate-source Voltage