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BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS( on) ID BUZ11 50 V < 0.04 36 A BUZ11FI 50 V < 0.04 21 A s TYPICAL RDS(on) = 0.03 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC 3 3 s LOW GATE CHARGE 2 2 1 1 s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, INTERNAL SCHEMATIC DIAGRAM ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI VD S Drain-source Voltage (V GS = 0) 50 V V DG R Drain- gate Voltage (R GS = 20 k) 50 V V GS Gate-source Voltage