ST stv200n55f3 free download

File name stv200n55f3.pdf

STV200N55F3 N-channel 55 V, 1.8 m, 200 A, PowerSO-10 STripFETTM Power MOSFET Features RDS(on) Type VDSS ID (1) max 10 STV200N55F3 55 V < 2.5 m 200 A 1. Current limited by package 1 PowerSO-10 Conduction losses reduced s) Low profile, very low parasitic inductance t( uc Application Switching applications Figure 1. d Internal schematic diagram and Description ro connection diagram (top view) P This n-channel enhancement mode Power MOSFET is the latest refinement of ST's le te STripFETTM process. The resulting transistor so Ob shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. - ct (s) o du e Pr o let O bs Table 1. Device summary Order code Marking Package Packaging STV200N55F3 200N55F3 PowerSO-10 Tape and reel March 2009 Rev 3 1/12 www.st.com 12 Contents STV200N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.