Philips bfr505t free download

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification 2000 May 17 Supersedes data of 2000 Mar 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION Low current consumption NPN transistor in a plastic SOT416 High power gain (SC-75) package. 3 lfpage Low noise figure High transition frequency PINNING Gold metallization ensures PIN DESCRIPTION 1 2 excellent reliability 1 base Top view MBK090 SOT416 (SC-75) package. 2 emitter 3 collector APPLICATIONS Marking code: N0. Low power amplifiers, oscillators and Fig.1 SOT416. mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 18 mA Ptot total power dissipation Ts 75 C; note 1 150 mW hFE DC current gain IC = 5 mA; VCE = 6 V; Tj = 25 C 60 120 250 fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; 9 GHz Tamb = 25 C GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; 17 dB Tamb = 25 C F noise figure IC = 1.25 mA; VCE = 6 V; 1.2 1.7 dB f = 900 MHz; Tamb = 25 C LIMITING VALUES In accordance with the Absolut