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2STA2121 High power PNP epitaxial planar bipolar transistor Features I High breakdown voltage VCEO = -250 V I Complementary to 2STC5949 I Typical ft = 25 MHz I Fully characterized at 125 oC Application I Audio power amplifier TO-264 Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2121 2STA2121 TO-264 Tube November 2008 Rev 3 1/8 www.st.com 8 Electrical ratings 2STA2121 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -250 V VCEO Collector-emitter voltage (IB = 0) -250 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -17 A ICM Collector peak current (tP < 5ms) -34 A PTOT Total dissipation at Tc = 25