Wietron c1815 free download

File name c1815.pdf

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO--92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 uA Collector cut-off current ICEO VCE= 50 V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 uA DC current gain hFE(1) VCE= 6 V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V VCE= 10 V, IC= 1mA Transition frequ