ST mjd112 mjd117 free download

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MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s LOW BASE-DRIVE REQUIREMENTS s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO TIP112 AND 3 TIP117 1 APPLICATIONS s GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER TO-252 (Suffix "T4") DESCRIPTION The MJD112 and MJD117 form complementary PNP - NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R1(typ) = 7K R2(typ) = 200 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Emitter Voltage (IE = 0) 100 V VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 2 A ICM Collector Peak Current (t p < 5 ms) 4 A IB Base Current 0.05 A Pt ot Tot al Dissipation at T c = 25 o C 20 W o T stg Storage Temperature -65 to 150 C o Tj Max. Ope rating Junction Temperature 150 C For PNP type voltage and current values are negative. September 1997 1/6 MJD112/MJD117 THERMAL DATA o R thj-ca se Thermal Resistance Junction-case Max 6.25 C/W o Rt hj-amb Thermal Resistance Junction-ambient Max 100 C/W