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STW47NM60 N-CHANNEL 600V - 0.075 - 47A TO-247 MDmeshTMPower MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STW47NM60 600V < 0.09 7.2 *nC 47 A TYPICAL RDS(on) = 0.075 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 2 LOW GATE INPUT RESISTANCE 1 TIGHT PROCESS CONTROL AND HIGH TO-247 MANUFACTURING YIELDS DESCRIPTION This improved version of MDmeshTM which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impres- INTERNAL SCHEMATIC DIAGRAM sively high dv/dt and excellent avalanche character- istics. The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage