KEC ktc1815 free download

File name ktc1815.pdf

SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTA1015. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(1) (Note) VCE=6V, IC=2mA 70 - 700 DC Current Gain hFE(2) VCE=6V, IC=150mA 25 100 - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Base Intrinsic Resistance rbb' VCB=10V, IE=1mA, f=30MHz - 50 - Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k , f=1kHz - 1.0 10 dB Note : hFE(1) Classification Y:120 240, GR:200 400 2005. 3. 22 Revision No : 0 1/3 KTC1815 2005. 3. 22 Revision No : 0 2/3 KTC1815 2005. 3. 22 Revision No : 0 3/3