Philips pbss8510pa free download

File name pbss8510pa.pdf

PBSS8510PA 100 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 1 -- 17 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS9410PA. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V IC collector current - - 5.2 A ICM peak collector current single pulse; - - 6 A tp 1 ms RCEsat collector-emitter IC = 5.2 A; [1] - 48 65 m saturation resistance IB = 260 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS8510PA 100 V, 5.2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1