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N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
Type VDSS RDS(ON) ID @VGS
CEP730G 400V 1 5.5A 10V
CEB730G 400V 1 5.5A 10V
CEF730G 400V 1 5.5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G D D
S S S
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