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Descr: . Electronic Components Datasheets Active components Transistors ST 2stc5949.pdf
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2stc5949.pdf2STC5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5949 2STC5949 TO-264 Tube November 2008 Rev 4 1/8

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