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2stc5949.pdf | | 2STC5949
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 250 V
Complementary to 2STA2121
Typical ft = 25 MHz
Fully characterized at 125 oC
Application
Audio power amplifier
TO-264
Description
The device is a NPN transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2STC5949 2STC5949 TO-264 Tube
November 2008 Rev 4 1/8
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