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STL65DN3LLH5 Dual N-channel 30 V, 0.0059 19 A , PowerFLATTM(5x6) double island, STripFETTM V Power MOSFET Features RDS(on) Type VDSS ID max STL65DN3LLH5 30 V <0.0065 19 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLATTM (5x6) High avalanche ruggedness Double island Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging PowerFLATTM(5x6) STL65DN3LLH5 65DN3LLH5 Tape and reel Double island December 2010 Doc ID 18323 Rev 1 1/12 www.st.com 12 Contents STL65DN3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 18323 Rev 1 STL65DN3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value