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| File name: | tsm1n60l_a07.pdf [preview tsm1n60l a07] |
| Size: | 403 kB |
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| MD5: | 1624a5b855a67de6f83de12cf73e1666 |
| Mfg: | Taiwansemi |
| Model: | tsm1n60l a07 🔎 |
| Original: | tsm1n60l a07 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Taiwansemi tsm1n60l_a07.pdf |
| Group: | Electronics > Components > Transistors > |
| Uploaded: | 26-06-2020 |
| User: | Anonymous |
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| tsm1n60l_a07.pdf | TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)() ID (A) 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM | |
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