Taiwansemi tsm1n60l a07 free download

File name tsm1n60l_a07.pdf

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)() ID (A) 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Block Diagram Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Ordering Information Part No. Package Packing TSM1N60LCP RO TO-252 2.5Kpcs / 13" Reel N-Channel MOSFET TSM1N60LCH C5 TO-251 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS