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File name: | tsm1n60l_a07.pdf [preview tsm1n60l a07] |
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Mfg: | Taiwansemi |
Model: | tsm1n60l a07 🔎 |
Original: | tsm1n60l a07 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Taiwansemi tsm1n60l_a07.pdf |
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tsm1n60l_a07.pdf | | TSM1N60L
600V N-Channel Power MOSFET
TO-252 TO-251 PRODUCT SUMMARY
Pin Definition: VDS (V) RDS(on)() ID (A)
1. Gate
600 12 @ VGS =10V 1
2. Drain
3. Source
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
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