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Descr: . Electronic Components Datasheets Active components Transistors Ixys cpc5602.pdf
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cpc5602.pdfCPC5602 N Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage (VDS) 350 V The CPC5602 is an "N" channel depletion mode Field Max On-Resistance (Ron-max) 14 Effect Transistor (FET) that utilizes Clare's proprietary Max Power 2.5 W third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly Features reliable device, particularly in difficult application

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