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Descr: . Electronic Components Datasheets Active components Transistors ST ste70nm60.pdf
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STE70NM60 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STE70NM60 600V < 0.055 70 A TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE ISOTOP DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STE70NM60 E70NM60 ISOTOP TUBE March 2003 1/8 STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage

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