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A42(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance, junction to Ambient 200 /mW RJC Thermal Resistance, unction to Case 83.3 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=10V, IC=1mA 60 DC current gain hFE(2) VCE=10V, IC=10mA 80 250 hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V Transition frequency fT VCE=20V, IC=10mA,f=30MHZ