ST am82731-05 free download

File name am82731-05.pdf

AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER- . . DRIVE LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) ORDER CODE hermetically sealed AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon PIN CONNECTION bipolar NPN transistor specifically designed for S- Band radar pulsed output and driver applications. The device is capable of operation over a wde range of pulse widths, duty cycles and tempera- tures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resist- ance, refractory/gold metallization, and compu- terized automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-050 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is 1. Collector 3. Emitter intended for military and other high reliability ap- 2. Base 4. Base plications. ABSOLUTE MAXIMUM RATINGS (T case = 25