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Descr: . Electronic Components Datasheets Active components Transistors ST sts9nh3ll.pdf
Group:Electronics > Components > Transistors
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STS9NH3LL N-channel 30 V - 0.018 - 9 A - SO-8 low gate charge STripFETTM III Power MOSFET Features RDS(on) Type VDSS ID max STS9NH3LL 30 V 0.022 9A Optimal RDS(on) x Qg trade-off @ 4.5 V Conduction losses reduced SO-8 s) Switching losses reduced Application t( Switching applications d uc Description P ro This application specific Power MOSFET is the third generation of STMicroelectronics unique Figure 1. te Internal schematic diagram le so "single feature size" strip-based process. The Ob resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it - (s) gives the best performance in terms of both conduction and switching losses. This is ct extremely important for motherboards where fast du switching and high efficiency are of paramount importance. o e Pr o let bs Table 1. Device summary Order code Marking Package Packaging O STS9NH3LL S9NH3LL SO-8 Tape & reel December 2007 Rev 3 1/13 www.st.com 13 Contents STS9NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit

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