TECHNICAL DATA N-Ch Trench MOSFET
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
Low Drain to Source On-state Resistance.
: RDS(ON)=7.4m (Max.) @ VGS=10V
: RDS(ON)=13.8m (Max.) @ VGS=4.5V
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS 20 V MARKING
[email protected]=25 (Note1) ID 66
Drain Current |