pd84006-e.pdf | | PD84006-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
Broadband performances:
POUT = 6 W with 13 dB gain @ 870 MHz
Plastic package
ESD protection
In compliance with the 2002/95/EC european
directive
Description PowerSO-10RF
(formed lead)
The PD84006-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It Figure 1. Pin connections
operates at 7 V in common source mode at
Source
frequencies of up to 1 GHz boasts the excellent
gain, linea |