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SEMICONDUCTOR KF13N50P/F N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KF13N50P KF13N50F Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 13 13* ID Drain Current @TC=100 8 8* A KF13N50F Pulsed (Note1) IDP 40 40* Single Pulsed Avalanche Energy EAS 860 mJ (Note 2) Repetitive Avalanche Energy EAR 19.5 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 208 49.8 W PD Dissipation Derate above 25 1.66 0.4 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.6 2.51 /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT 2010. 8. 16 Revision No : 2 1/7 KF13N50P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static D