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Now downloading free:Philips bu2727aw 1

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bu2727aw_1.pdfPhilips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V VCEO Collector-emitter voltage (open base) - 825 V IC Collector current (DC) - 12 A ICM

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