Samsung bu407 free download

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BU407/407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 330 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current IB 4 A Collector Dissipation ( T C=25 ) PC 60 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic Symbol Test Conditions Min Max Unit Collector Cutoff Current (VBE=0) ICES VCE = 330V, VBE = 0 5 mA VCE = 200V, VBE = 0 100 uA VCE = 200V, VBE = 0, T C = 150 1 mA Emitter Cutoff Current (IC=0) IEBO VBE = 6V, IC = 0 1 mA Collector Emitter Saturation Voltage : BU407 VCE(sat) IC = 5A, IB = 0.5A 1 V : BU407H IC = 5A, IB = 0.8A 1 V Base Emitter Saturation Voltage : BU407 VBE(sat) IC = 5A, IB = 0.5A 1.2 V : BU407H IC = 5A, IB = 0.8A 1.2 V Current Gain- Bandwidth Product fT VCE = 10V, IC = 0.5A 10 MHz Turn-off Time : BU407 toff IC = 5A, IB = 0.5A 0.75 uS : BU407H IC = 5A, IB = 0.8A 0.4 uS BU407/407H NPN EPITAXIAL SILICON TRANSISTOR