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bu2722ax_1.pdf | | Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2722AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V
VCEO Collector-emitter voltage (open base) - 825 V
IC Collector current (DC) - 10 A
ICM |
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