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File name: | phb44n06lt.pdf [preview phb44n06lt] |
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Mfg: | Philips |
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Original: | phb44n06lt 🔎 |
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phb44n06lt.pdf | | Philips Semiconductors Product specification
TrenchMOSTM transistor PHB44N06LT
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 55 V
mounting. Using 'trench' technology ID Drain current (DC) 44 A
the device features very low on-state Ptot Total power dissipation 114 W
resistance and has integral zener Tj Junction temperature |
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