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STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET T YPE V DSS R DS(o n) ID ST B60NE03L-10 30 V < 0.010 60 A s TYPICAL RDS(on) = 0.007 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION 3 1 s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK DESCRIPTION TO-263 This Power Mosfet is the latest development of (suffix "T4") SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 30 V V DGR Drain- gate Voltage (R GS = 20 k) 30 V V GS Gate-source Voltage