ST am83135-01 free download

File name am83135-01.pdf

AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALL IZATION . . EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed O RDER CODE BRANDING AM83135-001 83135-1 DESCRIPTION PIN CONNECTION The AM83135-001 device is a medium power sili- con bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metal- lization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-001 is supplied int the AMPACTM Hermet ic/Ceramic package with internal In- 1. Collector 3. Emitter put/Output impedance matching circuitry, and is 2. Base 4. Base intended for military and other high reliability ap- ABSOLUTE MAXIMUM RATINGS (T case = 25