Philips pbss5140t free download

File name pbss5140t.pdf

PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 -- 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation 1.3 Applications I General-purpose switching and muting I LCD backlighting I Supply line switching circuits I Battery-driven equipment (mobile phones, video cameras and handheld devices) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -40 V IC collector current - - -1 A ICM peak collector current single pulse; - - -2 A tp 1 ms RCEsat collector-emitter IC = -500 mA; [1] - 300 < 500 m saturation resistance IB = -50 mA [1] Pulse test: tp 300