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bu2727af_1.pdf | | Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V
VCEO Collector-emitter voltage (open base) - 825 V
IC Collector current (DC) - 12 A
ICM Collect |
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