LGE 2sc2712 sot-23 free download

File name 2sc2712_sot-23.pdf

2SC2712 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A DC current gain hFE VCE=6V, IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10mA 0.1 0.25 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Output capacitance Cob VCB=10V, IE=0,f=1 MHz 2.0 3.5 pF VCE=6V,IC=0.1mA,f=1kHz, Noise Figure NF 1.0 10 dB Rg=10k CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 3