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STB60NE06-16 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID STB60NE06-1 60 V < 0.016 60 A s TYPICAL RDS(on) = 0.013 s EXCEPTIONAL dV/dt CAPABILTY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s HIGH dV/dt CAPABILITY 3 1 s APPLICATION ORIENTED CHARACTERIZATION D2PAK s FOR THROUGH-HOLE VERSION CONTACT TO-263 SALES OFFICE (Suffix "T4") DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 60 V VDGR Drain- gate Voltage (R GS = 20 k) 60 V V GS Gate-source Voltage