KEC kmb054n40ia free download

File name kmb054n40ia.pdf

SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS 20 V DC@TC=25 (Note1) ID 54 Drain Current A Pulsed (Note2) IDP 100 Drain-Source-Diode Forward Current IS 100 A @TC=25 (Note1) 45 Drain Power Dissipation PD W @Ta=25 (Note2) 3.1 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Case (Note1) RthJC 2.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. PIN CONNECTION (TOP VIEW) 2009. 7. 30 Revision No : 0 1/5 KMB054N40IA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 40 - - V Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.9 3 V VGS=10V, ID=14A - 6.5 8.5 Drain-Source ON Resistance RDS(ON)*